The International Conference on integrated circuits (International Solid State Circuits Conference) by SanDisk introduced together with the Toshiba development – technology, flash memory, combining technology, X3 and 32-nanometer manufacturing process of production of chips. Created in such a way NAND-memory modules with multilevel cells (MLC) will have a capacity of up to 32 GB – each cell can store three bits of information. Sami chips produced so compact that they can be easily used in the manufacture of memory card format microSD.

The manufacturer claims that the modules X3, created on 32-nanometer production methods, and provide a capacity of 32 GB of memory microSD highest density – because of its capacity is double the performance of chip microSD, produced on 43-nanometer technology. Distribution of microSD cards in proportion to increased sales of mobile phones, or media with memory expansion slots. Several earlier SanDisk and Toshiba have submitted plans to release another ultraplotnoy form of flash memory NAND – namely X4. In this technology, a new memory controller, and each cell is placed in the four bits of data, and transmission speed is 7.8 MB per second. Components can be used to increase capacity to 64 GB, doubling the 32-gigabaytnye drives that Toshiba began producing at the end of last year.
Companies plan to begin production of 32-gigabaytnoy 32-nanometer memory X3 in the second half of 2009. Although the suppliers is not yet possible applications from independent companies, Toshiba has supplied components for your Apple iPhone or iPod touch. A sale of flash cards X4 will begin in the first half of 2009.